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| Power F-MOS FETs 2SK1606 www..com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 s Applications 16.70.3 7.50.2 q High-speed switching (switching power supply) q For high-frequency power amplification 3.10.1 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 450 30 8 16 130 50 2 150 -55 to +150 Unit V V A A mJ 4.0 1.40.1 1.30.2 14.00.5 Solder Dip 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25C Ta = 25C 1 2 W C C 1: Gate 2: Drain 3: Source EIAJ: SC-67 TO-220 Full Pack Package (a) 3 Single pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Avalanche energy capacity Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS EAS* Vth RDS(on) | Yfs | Coss ton tf td(off) Conditions VDS = 360V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 L = 4.1mH, ID = 8A, VDD = 50V VDS = 25V, ID = 1mA VGS = 10V, ID = 4A VDS = 25V, ID = 4A VDS = 20V, VGS = 0, f = 1MHz 3 450 130 1 0.56 5 1300 160 70 VGS = 10V, ID = 4A VDD = 150V, RL = 37.5 70 50 150 5 0.75 min typ max 0.1 1 Unit mA A V mJ V S pF pF pF ns ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Fall time Turn-off time (delay time) * Avalanche energy capacity test circuit L ID Gate VDS Drain Source C VDD PVS RGS 1 Power F-MOS FETs ID VDS 16 14 12 10 8 6V 6 4 2 0 0 10 20 PD=50W 30 40 50 60 5.5V 10 2SK1606 | Yfs | ID Drain to source ON-resistance RDS(on) () 1.2 TC=25C 1.0 RDS(on) ID VDS=25V TC=25C VGS=8V Forward transfer admittance |Yfs| (S) 15V 10V www..com TC=25C 8 Drain current ID (A) 7V 0.8 6 VGS=10V 15V 0.6 4 0.4 2 0.2 5V 0 0 4 8 12 16 20 24 0 0 4 8 12 16 20 24 Drain to source voltage VDS (V) Drain current ID (A) Drain current ID (A) ID VGS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 VDS=25V TC=25C 10000 Ciss, Coss, Crss VDS TC=25C 600 ton, tf, td(off) ID VDD=150V VGS=10V TC=25C Switching time ton,tf,td(off) (ns) 3000 Ciss 500 Drain current ID (A) 1000 400 300 300 100 Coss 30 Crss 200 td(off) 100 ton tf 10 0 40 80 120 160 200 240 0 0 2 4 6 8 10 12 Gate to source voltage VGS (V) Drain to source voltage VDS (V) Drain current ID (A) PD Ta 80 Area of safe operation (ASO) 100 240 EAS Tj Avalanche energy capacity EAS (mJ) ID=8A VDD=50V 200 Allowable power dissipation PD (W) 70 60 50 40 (1) TC=Ta (2) Without heat sink (PD=2.0W) 30 IDP 10 3 ID Non repetitive pulse TC=25C Drain current ID (A) t=1ms DC 160 1 0.3 0.1 0.03 120 (1) 30 20 10 (2) 0 0 20 40 60 80 100 120 140 160 10ms 80 40 0.01 1 3 10 30 100 300 1000 0 25 50 75 100 125 150 175 Ambient temperature Ta (C) Drain to source voltage VDS (V) Junction temperature Tj (C) 2 |
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